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US Patent Issued to Battelle Memorial Institute on July 21 for "Composition and method embodiments for plating metal coatings" (Washington Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,936, issued on July 21, was assigned to Battelle Memorial Institute (Richland, Wash.). "Composition and method embodiments for plating meta... और पढ़ें


US Patent Issued to Poro Technologies on July 21 for "Wafer holder and method" (British Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,938, issued on July 21, was assigned to Poro Technologies LTD (Cambridge, Great Britain). "Wafer holder and method" was invented by Tongton... और पढ़ें


US Patent Issued to DISCO, Ioffe Institute on July 21 for "Method for producing single crystal diamond and single crystal diamond" (Japanese, Russian Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,939, issued on July 21, was assigned to DISCO Corp. (Tokyo) and Ioffe Institute (St Petersburg, Russia). "Method for producing single cryst... और पढ़ें


US Patent Issued to SHIN-ETSU HANDOTAI on July 21 for "Single crystal pulling apparatus and method for pulling single crystal" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,940, issued on July 21, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo). "Single crystal pulling apparatus and method for pulling singl... और पढ़ें


US Patent Issued to Siemens Medical Solutions USA on July 21 for "Asymmetric thermal fields for excluding impurities in single crystal manufacturing device" (Tennessee Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,941, issued on July 21, was assigned to Siemens Medical Solutions USA Inc. (Malvern, Pa.). "Asymmetric thermal fields for excluding impurit... और पढ़ें


US Patent Issued to SUMCO on July 21 for "Manufacturing method of single crystals" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,942, issued on July 21, was assigned to SUMCO Corp. (Tokyo). "Manufacturing method of single crystals" was invented by Yasunobu Shimizu (To... और पढ़ें


US Patent Issued to SICRYSTAL on July 21 for "Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same" (German Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,943, issued on July 21, was assigned to SICRYSTAL GMBH (Nuremberg, Germany). "Crystal structure orientation in semiconductor semi-finished ... और पढ़ें


US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on July 21 for "SiC substrate, SiC substrate production method, SiC semiconductor device, and SiC semiconductor device production method" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,945, issued on July 21, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Nagoya, Japan). "SiC ... और पढ़ें


US Patent Issued to Sumitomo Electric Industries on July 21 for "Gallium arsenide single crystal substrate and method of producing same" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,946, issued on July 21, was assigned to Sumitomo Electric Industries Ltd. (Osaka, Japan). "Gallium arsenide single crystal substrate and me... और पढ़ें


US Patent Issued to Resonac on July 21 for "SiC ingot and SiC wafer" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,686,947, issued on July 21, was assigned to Resonac Corp. (Tokyo). "SiC ingot and SiC wafer" was invented by Yoshitaka Nishihara (Chichibu, Jap... और पढ़ें